VN2222VN2224N-Channel Enhancement-ModeVertical DMOS FETsOrdering InformationOrder Number / PackageBVDSS /RDS(ON) ID(ON)BVDGS (max) (min) TO-92 20-Pin C-Dip220V 1.25 5.0A VN2222NC240V 1.25 5.0A VN2224N3 High Reliability DevicesAdvanced DMOS TechnologySee pages 5-4 and 5-5 for MILITARY STANDARD ProcessFlows and Ordering Information. These enhancement-mode (n

Supertex inc. VN2224N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power h

VN0610L, VN10KLS, VN2222LVishay SiliconixN-Channel 60-V (D-S) MOSFETs with Zener GatePRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Zener Diode Input Protected D Extra ESD Protection D Drivers: Rel

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby VN2222LL/DTMOS FET TransistorNChannel EnhancementVN2222LL3 DRAINMotorola Preferred Device2GATE1 SOURCEMAXIMUM RATINGSRating Symbol Value Unit1DrainSource Voltage VDSS 60 Vdc23DrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcCASE 2904, STYLE 22GateSource VoltageTO92 (TO226AA)

VN0610L, VN10KLS, VN2222LVishay SiliconixN-Channel 60-V (D-S) MOSFETs with Zener GatePRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Zener Diode Input Protected D Extra ESD Protection D Drivers: Rel

VN10LLS, VN0605T, VN0610LL, VN2222LLVishay SiliconixN-Channel 60-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.1860VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2.5 W

N-CHANNEL ENHANCEMENTVN2222LLMODE VERTICAL DMOS FETISSUE 2 FEB 94S G DTO92ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb = 25C ID 150 mAPulsed Drain Current IDM 1AGate Source Voltage VGS 40 VPower Dissipation at Tamb = 25C Ptot 400 mWOperating and Storage Temperature Range Tj:Tstg -55 to

VN2222LLGSmall Signal MOSFET150 mAmps, 60 VoltsN-Channel TO-92http://onsemi.comhttp://onsemi.comFeatures This is a Pb-Free Device*150 mA, 60 VRDS(on) = 7.5 WMAXIMUM RATINGSN-ChannelRating Symbol Value UnitDDrain -Source Voltage VDSS 60 VdcDrain-Gate Voltage (RGS = 1.0 MW) VDGR 60 VdcGate-Source VoltageG- Continuous VGS 20 Vdc- Non-repetitive (tp 5

VN10/0605/0610/2222 SeriesN-Channel Enhancement-Mode MOSFET TransistorsVN10LE VN0605T VN2222LLVN10LM VN0610LL VN2222LMProduct SummaryPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A)VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38VN10LM 5 @ VGS = 10 V 0.8 to 2.5 0.32VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.186060VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28VN2222LL 7.5 @ VGS