VN2406L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VN2406L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 240 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm

Encapsulados: TO-92

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VN2406L datasheet

 ..1. Size:54K  vishay
 tn2410l vn2406d vn2406l vn2410ls.pdf pdf_icon

VN2406L

TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix N-Channel 240-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12 VN2406L 240 6 @ VGS = 10 V 0.8 to 2 0.18 VN2410L 10 @ VGS = 10 V 0.8 to 2 0.18 VN2410LS 10 @ VGS = 10 V 0.8 to 2 0.19 FEATURES BENEFITS APPLICATIONS D

 0.1. Size:56K  motorola
 vn2406l.rev1.pdf pdf_icon

VN2406L

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by VN2406L/D TMOS FET Transistor VN2406L 3 DRAIN N Channel Enhancement Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 240 Vdc 1 2 3 Drain Gate Voltage VDGR 60 Vdc Gate Source Voltage CASE 29 04, STYLE 22 Continuous VGS 20 Vdc TO 92 (

 8.1. Size:64K  vishay
 tn2410l vn2406d-l vn2410l-ls.pdf pdf_icon

VN2406L

TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix N-Channel 240-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12 VN2406L 240 6 @ VGS = 10 V 0.8 to 2 0.18 VN2410L 10 @ VGS = 10 V 0.8 to 2 0.18 VN2410LS 10 @ VGS = 10 V 0.8 to 2 0.19 FEATURES BENEFITS APPLICATIONS D

 8.2. Size:546K  supertex
 vn2406.pdf pdf_icon

VN2406L

Supertex inc. VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power h

MOSTRAR MÁS

Otros transistores... VN2210N2, VN2210N3, VN2222KM, VN2222LLG, VN2222LM, VN2224, VN2406, VN2406D, TK10A60D, VN2410, VN2410L, VN2410LS, VN2450N8, VN2450N3, VN2460N8, VN2460N3, SM8206AO