VN2410 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VN2410
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1 W
Voltaje máximo drenador - fuente |Vds|: 240 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 0.18 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Tiempo de subida (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 50 pF
Resistencia entre drenaje y fuente RDS(on): 10 Ohm
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de MOSFET VN2410
VN2410 Datasheet (PDF)
vn2410.pdf
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Supertex inc. VN2410N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power h
vn2410l.rev1.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby VN2410L/DTMOS FET TransistorVN2410L3 DRAINNChannel Enhancement2GATE1 SOURCEMAXIMUM RATINGSRating Symbol Value Unit1DrainSource Voltage VDSS 240 Vdc23DrainGate Voltage VDGR 60 VdcGateSource VoltageCASE 2904, STYLE 22 Continuous VGS 20 VdcTO92 (TO226AA) Nonrep
vn2410l.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby VN2410L/DTMOS FET TransistorVN2410L3 DRAINNChannel Enhancement2GATE1 SOURCEMAXIMUM RATINGSRating Symbol Value Unit1DrainSource Voltage VDSS 240 Vdc23DrainGate Voltage VDGR 60 VdcGateSource VoltageCASE 2904, STYLE 22 Continuous VGS 20 VdcTO92 (TO226AA) Nonrep
tn2410l vn2406d-l vn2410l-ls.pdf
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TN2410L, VN2406D/L, VN2410L/LSVishay SiliconixN-Channel 240-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12VN2406L 240 6 @ VGS = 10 V 0.8 to 2 0.18VN2410L 10 @ VGS = 10 V 0.8 to 2 0.18VN2410LS 10 @ VGS = 10 V 0.8 to 2 0.19FEATURES BENEFITS APPLICATIONSD
tn2410l vn2406d vn2406l vn2410ls.pdf
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TN2410L, VN2406D/L, VN2410L/LSVishay SiliconixN-Channel 240-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12VN2406L 240 6 @ VGS = 10 V 0.8 to 2 0.18VN2410L 10 @ VGS = 10 V 0.8 to 2 0.18VN2410LS 10 @ VGS = 10 V 0.8 to 2 0.19FEATURES BENEFITS APPLICATIONSD
vn2410l.pdf
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VN2410LSmall Signal MOSFET240 V, 200 mA, N-Channel TO-92Features Pb-Free Packages are Available*http://onsemi.comMAXIMUM RATINGS200 mA, 240 VRating Symbol Value UnitRDS(on) = 10 Drain -Source Voltage VDSS 240 VdcN-ChannelDrain -Gate Voltage VDGR 240 VdcDGate-Source Voltage- Continuous VGS 20 Vdc- Non-repetitive (tp 50 s) VGSM 40 VpkContinuous D
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