All MOSFET. VN2410 Datasheet

 

VN2410 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VN2410
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 240 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
   Package: TO-92

 VN2410 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VN2410 Datasheet (PDF)

 ..1. Size:544K  supertex
 vn2410.pdf

VN2410 VN2410

Supertex inc. VN2410N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power h

 0.1. Size:56K  motorola
 vn2410l.rev1.pdf

VN2410 VN2410

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby VN2410L/DTMOS FET TransistorVN2410L3 DRAINNChannel Enhancement2GATE1 SOURCEMAXIMUM RATINGSRating Symbol Value Unit1DrainSource Voltage VDSS 240 Vdc23DrainGate Voltage VDGR 60 VdcGateSource VoltageCASE 2904, STYLE 22 Continuous VGS 20 VdcTO92 (TO226AA) Nonrep

 0.2. Size:40K  motorola
 vn2410l.pdf

VN2410 VN2410

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby VN2410L/DTMOS FET TransistorVN2410L3 DRAINNChannel Enhancement2GATE1 SOURCEMAXIMUM RATINGSRating Symbol Value Unit1DrainSource Voltage VDSS 240 Vdc23DrainGate Voltage VDGR 60 VdcGateSource VoltageCASE 2904, STYLE 22 Continuous VGS 20 VdcTO92 (TO226AA) Nonrep

 0.3. Size:64K  vishay
 tn2410l vn2406d-l vn2410l-ls.pdf

VN2410 VN2410

TN2410L, VN2406D/L, VN2410L/LSVishay SiliconixN-Channel 240-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12VN2406L 240 6 @ VGS = 10 V 0.8 to 2 0.18VN2410L 10 @ VGS = 10 V 0.8 to 2 0.18VN2410LS 10 @ VGS = 10 V 0.8 to 2 0.19FEATURES BENEFITS APPLICATIONSD

 0.4. Size:54K  vishay
 tn2410l vn2406d vn2406l vn2410ls.pdf

VN2410 VN2410

TN2410L, VN2406D/L, VN2410L/LSVishay SiliconixN-Channel 240-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12VN2406L 240 6 @ VGS = 10 V 0.8 to 2 0.18VN2410L 10 @ VGS = 10 V 0.8 to 2 0.18VN2410LS 10 @ VGS = 10 V 0.8 to 2 0.19FEATURES BENEFITS APPLICATIONSD

 0.5. Size:106K  onsemi
 vn2410l.pdf

VN2410 VN2410

VN2410LSmall Signal MOSFET240 V, 200 mA, N-Channel TO-92Features Pb-Free Packages are Available*http://onsemi.comMAXIMUM RATINGS200 mA, 240 VRating Symbol Value UnitRDS(on) = 10 Drain -Source Voltage VDSS 240 VdcN-ChannelDrain -Gate Voltage VDGR 240 VdcDGate-Source Voltage- Continuous VGS 20 Vdc- Non-repetitive (tp 50 s) VGSM 40 VpkContinuous D

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