VN2410 MOSFET. Datasheet pdf. Equivalent
Type Designator: VN2410
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 240 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 0.18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
Package: TO-92
VN2410 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VN2410 Datasheet (PDF)
vn2410.pdf
Supertex inc. VN2410N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power h
vn2410l.rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby VN2410L/DTMOS FET TransistorVN2410L3 DRAINNChannel Enhancement2GATE1 SOURCEMAXIMUM RATINGSRating Symbol Value Unit1DrainSource Voltage VDSS 240 Vdc23DrainGate Voltage VDGR 60 VdcGateSource VoltageCASE 2904, STYLE 22 Continuous VGS 20 VdcTO92 (TO226AA) Nonrep
vn2410l.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby VN2410L/DTMOS FET TransistorVN2410L3 DRAINNChannel Enhancement2GATE1 SOURCEMAXIMUM RATINGSRating Symbol Value Unit1DrainSource Voltage VDSS 240 Vdc23DrainGate Voltage VDGR 60 VdcGateSource VoltageCASE 2904, STYLE 22 Continuous VGS 20 VdcTO92 (TO226AA) Nonrep
tn2410l vn2406d-l vn2410l-ls.pdf
TN2410L, VN2406D/L, VN2410L/LSVishay SiliconixN-Channel 240-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12VN2406L 240 6 @ VGS = 10 V 0.8 to 2 0.18VN2410L 10 @ VGS = 10 V 0.8 to 2 0.18VN2410LS 10 @ VGS = 10 V 0.8 to 2 0.19FEATURES BENEFITS APPLICATIONSD
tn2410l vn2406d vn2406l vn2410ls.pdf
TN2410L, VN2406D/L, VN2410L/LSVishay SiliconixN-Channel 240-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12VN2406L 240 6 @ VGS = 10 V 0.8 to 2 0.18VN2410L 10 @ VGS = 10 V 0.8 to 2 0.18VN2410LS 10 @ VGS = 10 V 0.8 to 2 0.19FEATURES BENEFITS APPLICATIONSD
vn2410l.pdf
VN2410LSmall Signal MOSFET240 V, 200 mA, N-Channel TO-92Features Pb-Free Packages are Available*http://onsemi.comMAXIMUM RATINGS200 mA, 240 VRating Symbol Value UnitRDS(on) = 10 Drain -Source Voltage VDSS 240 VdcN-ChannelDrain -Gate Voltage VDGR 240 VdcDGate-Source Voltage- Continuous VGS 20 Vdc- Non-repetitive (tp 50 s) VGSM 40 VpkContinuous D
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