SM9988CO Todos los transistores

 ..1. Size:267K  sino
 sm9988co.pdf

SM9988CO Dual N-Channel Enhancement Mode MOSFET Features Pin Description D S2 S2 20V/7A, G2 RDS(ON)=16m (typ.) @ VGS=4.5V D RDS(ON)=19m (typ.) @ VGS=2.5V S1 S1 G1 Reliable and Rugged Lead Free and Green Devices Available Top View of TSSOP 8 (RoHS Compliant) (1) (8) ESD Protection D D (4) (5) Applications G1 G2 Power Management in Notebook Computer, Portable Equ

 9.1. Size:273K  sino
 sm9989dsqg.pdf

SM9989DSQG Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/12.4A, S2 S2 RDS(ON)= 15m (Max.) @ VGS=4.5V G2 RDS(ON)= 16m (Max.) @ VGS=4V S1 RDS(ON)= 18.5m (Max.) @ VGS=3.1V S1 G1 RDS(ON)= 22m (Max.) @ VGS=2.5V Reliable and Rugged Top View of DFN2x5-6 Lead Free and Green Devices Available (RoHS Compliant) D D ESD Protection (3) (4) G1 G2 Applicati

 9.2. Size:257K  sino
 sm9989dso.pdf

SM9989DSO Dual N-Channel Enhancement Mode MOSFET Features Pin Description D S2 20V/7.5A, S2 G2 RDS(ON)= 14.5m (max.) @ VGS= 4.5V RDS(ON)= 15.5m (max.) @ VGS= 4V D S1 RDS(ON)= 17m (max.) @ VGS= 3.1V S1 G1 RDS(ON)= 20m (max.) @ VGS= 2.5V Reliable and Rugged Top View of TSSOP-8 ESD Protected (1) (8) Lead Free and Green Devices Available D D (RoHS Compliant) (4) (5) G1

 9.3. Size:229K  sino
 sm9989dsqa.pdf

SM9989DSQA Dual N-Channel Enhancement Mode MOSFET Features Pin Description D2 20V/10A, D1D2 D1 RDS(ON)= 14m (max.) @ VGS= 4.5V RDS(ON)= 15m (max.) @ VGS= 4V G2 S2 RDS(ON)= 17.5m (max.) @ VGS= 3.1V S1G1 RDS(ON)= 21m (max.) @ VGS= 2.5V Top View of DFN3x3C-8 100% UIS + Rg Tested Reliable and Rugged (8) (7) (6) (5) Lead Free and Green Devices Available D1 D1 D2 D2 (RoHS

 9.4. Size:673K  globaltech semi
 gsm9987.pdf

GSM9987 GSM9987 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM9987, N-Channel enhancement mode 90V/15A,RDS(ON)= 75m @VGS=10V MOSFET, uses Advanced Trench 90V/12A,RDS(ON)= 85m @VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for extremely gate charge. These devices are particularly low RDS (ON) suit

 9.5. Size:202K  silicon standard
 ssm9985gm.pdf

SSM9985GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Low On-Resistance BVDSS 40V D Fast Switching Speed D D RDS(ON) 15m Surface Mount Package D ID 10A G S S SO-8 S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

 9.6. Size:192K  silicon standard
 ssm9987gh.pdf

SSM9987GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY BVDSS 80V D RDS(ON) 90m Low Gate Charge Single Drive Requirement ID 15A G Fast Switching Performance S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. G D S provide the designer with the best combination of fast switching, TO-252(H) ruggedized device design, low on-resistance and c

 9.7. Size:226K  silicon standard
 ssm9980m.pdf

SSM9980M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV 80V D2 DSS D2 D1 Lower gate charge R 52m DS(ON) D1 Fast switching characteristics ID 4.6A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 ruggedized device design, low on-resistance and

 9.8. Size:764K  silicon standard
 ssm9980gh ssm9980gj.pdf

SSM9980GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9980Gx acheives fast switching performance BVDSS 80V with low gate charge without a complex drive circuit. It is RDS(ON) 45m suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 21A D The SSM9980GH is in a TO-252 package, which is Pb-free; RoHS-

 9.9. Size:192K  silicon standard
 ssm9987gm.pdf

SSM9987GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D2 Low Gate Charge BVDSS 80V D1 D1 Single Drive Requirement RDS(ON) 90m G2 Surface Mount Package S2 ID 3.5A G1 SO-8 S1 DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D2 D1 provide the designer with the best combination of fast switching, ruggedized device design, lower on-resi