SM9988CO Datasheet and Replacement

SM9988CODual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDS2S2 20V/7A,G2RDS(ON)=16m (typ.) @ VGS=4.5VDRDS(ON)=19m (typ.) @ VGS=2.5VS1S1G1 Reliable and Rugged Lead Free and Green Devices AvailableTop View of TSSOP 8(RoHS Compliant)(1) (8) ESD Protection D D(4) (5)ApplicationsG1G2 Power Management in Notebook Computer,Portable Equ

SM9989DSQGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/12.4A,S2S2RDS(ON)= 15m (Max.) @ VGS=4.5VG2RDS(ON)= 16m (Max.) @ VGS=4VS1RDS(ON)= 18.5m (Max.) @ VGS=3.1VS1G1RDS(ON)= 22m (Max.) @ VGS=2.5V Reliable and RuggedTop View of DFN2x5-6 Lead Free and Green Devices Available(RoHS Compliant)D D ESD Protection(3) (4)G1G2Applicati

SM9989DSODual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDS2 20V/7.5A,S2G2RDS(ON)= 14.5m (max.) @ VGS= 4.5VRDS(ON)= 15.5m (max.) @ VGS= 4VDS1RDS(ON)= 17m (max.) @ VGS= 3.1VS1G1RDS(ON)= 20m (max.) @ VGS= 2.5V Reliable and RuggedTop View of TSSOP-8 ESD Protected(1) (8) Lead Free and Green Devices AvailableD D (RoHS Compliant)(4) (5)G1

SM9989DSQA Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD2 20V/10A,D1D2D1RDS(ON)= 14m (max.) @ VGS= 4.5VRDS(ON)= 15m (max.) @ VGS= 4VG2S2RDS(ON)= 17.5m (max.) @ VGS= 3.1V S1G1RDS(ON)= 21m (max.) @ VGS= 2.5VTop View of DFN3x3C-8 100% UIS + Rg Tested Reliable and Rugged(8) (7) (6) (5) Lead Free and Green Devices Available D1 D1 D2 D2 (RoHS

GSM9987 GSM9987 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM9987, N-Channel enhancement mode 90V/15A,RDS(ON)= 75m@VGS=10V MOSFET, uses Advanced Trench 90V/12A,RDS(ON)= 85m@VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for extremely gate charge. These devices are particularly low RDS (ON) suit

SSM9985GMN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY Low On-Resistance BVDSS 40VDFast Switching Speed DD RDS(ON) 15mSurface Mount Package DID 10AGSSSO-8SDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. Dprovide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

SSM9987GHN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY BVDSS 80VDRDS(ON) 90mLow Gate Charge Single Drive Requirement ID 15AGFast Switching Performance SDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. GDSprovide the designer with the best combination of fast switching, TO-252(H)ruggedized device design, low on-resistance and c

SSM9980M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 80VD2 DSSD2D1Lower gate charge R 52mDS(ON)D1Fast switching characteristics ID 4.6AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and

SSM9980GH,JN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9980Gx acheives fast switching performanceBVDSS 80Vwith low gate charge without a complex drive circuit. It isRDS(ON) 45msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 21AD The SSM9980GH is in a TO-252 package, which isPb-free; RoHS-

SSM9987GMN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY D2D2Low Gate Charge BVDSS 80VD1D1Single Drive Requirement RDS(ON) 90mG2Surface Mount Package S2ID 3.5AG1SO-8 S1DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D2D1provide the designer with the best combination of fast switching, ruggedized device design, lower on-resi