SMC2333 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SMC2333  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 62 nS

Cossⓘ - Capacitancia de salida: 235 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: SOT-23L

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SMC2333 datasheet

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smc2333.pdf pdf_icon

SMC2333

SMC2333 -20V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC2333 is the P-Channel logic enhancement -20V/-6.0A, RDS(ON) =22m (typ)@VGS =-10V mode power field effect transistor is produced using -20V/-6.0A, RDS(ON) =26m (typ)@VGS =-4.5V high cell density. advanced trench technology to -20V/-3.5A, RDS(ON) =36m (typ)@VGS =-2.5V provide excelle

 9.1. Size:373K  semtron
smc2342a.pdf pdf_icon

SMC2333

SMC2342A 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC2342A is the N-Channel logic 20V/5.0A, RDS(ON) =21m (typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/4.0A, RDS(ON) =26m (typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.8A, RDS(ON) =40m (typ.)@VGS =1.8V technology to provide excellent RD

 9.2. Size:367K  semtron
smc2360.pdf pdf_icon

SMC2333

SMC2360 60V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC2360 is the N-Channel logic enhancement 60V/6.1A, RDS(ON) =85m (typ.)@VGS =10V mode power field effect transistor is produced using high cell density. advanced trench technology to Improved dv/dt capability provide excellent RDS(ON) and low gate charge. Fast Switching This device is su

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