SMC2333 Datasheet and Replacement
Type Designator: SMC2333
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 235 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOT-23L
SMC2333 substitution
SMC2333 Datasheet (PDF)
smc2333.pdf

SMC2333 -20V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC2333 is the P-Channel logic enhancement -20V/-6.0A, RDS(ON) =22m(typ)@VGS =-10V mode power field effect transistor is produced using -20V/-6.0A, RDS(ON) =26m(typ)@VGS =-4.5V high cell density. advanced trench technology to -20V/-3.5A, RDS(ON) =36m(typ)@VGS =-2.5V provide excelle
smc2342a.pdf

SMC2342A 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC2342A is the N-Channel logic 20V/5.0A, RDS(ON) =21m(typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/4.0A, RDS(ON) =26m(typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.8A, RDS(ON) =40m(typ.)@VGS =1.8V technology to provide excellent RD
smc2360.pdf

SMC2360 60V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC2360 is the N-Channel logic enhancement 60V/6.1A, RDS(ON) =85m(typ.)@VGS =10V mode power field effect transistor is produced using high cell density. advanced trench technology to Improved dv/dt capability provide excellent RDS(ON) and low gate charge. Fast SwitchingThis device is su
Datasheet: SM8A05NSF , SM8A05NSFP , SM9188DSO , SM9988CO , SM9989DSQG , SM9993DSQG , SM9A01NSF , SM9A01NSFP , NCEP15T14 , SMC2342A , SMC2360 , SMC3054 , SMC3056 , SMC3400 , SMC3401 , SMC3407 , SMC3414 .
History: IPW60R280P6
Keywords - SMC2333 MOSFET datasheet
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History: IPW60R280P6



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