SML20B56F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SML20B56F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 56 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 145 nC
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 980 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
Paquete / Cubierta: TO-247AD
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SML20B56F Datasheet (PDF)
sml20b56 sml20b56f.pdf
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SML20B56TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 200V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 56A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 0.0452.21
sml20b67 sml20b67f.pdf
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SML20B67TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 200V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 67A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 0.0382.21
sml20w65.pdf
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SML20W65TO267 Package Outline.Dimensions in mm (inches)NCHANNELENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETSVDSS 200VID(cont) 65ARDS(on) 0.026 Faster Switching Lower Leakage TO267 Hermetic PackageDStarMOS is a new generation of high voltageNChannel enhancement mode power MOSFETs.This new technology minimises the JFET effect,Gincreases
sml20j175.pdf
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SML20J175SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3
sml2005smd1.pdf
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N-CHANNEL POWER MOSFET SML2005SMD1 Low RDS(on) MOSFET Transistor. Hermetic Ceramic Surface Mount Package Ideally suited for Power Supply, Motor Controls and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage 200V VGS Gate Source Voltage 20V ID Tc = 25C Con
sml20j175f.pdf
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N-CHANNEL POWER MOSFET SML20J175 Fast Switching and Low leakage 100% Avalanche Tested Popular SOT-227 Package StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieve faster switching speeds through optimised
sml20j122.pdf
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SML20J122SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3
sml20s67.pdf
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SML20S67D3PAK Package Outline.Dimensions in mm (inches)NCHANNEL4.98 (0.196)5.08 (0.200)ENHANCEMENT MODE15.95 (0.628) 13.41 (0.528)1.47 (0.058) 16.05 (0.632) 13.51 (0.532)1.04 (0.041)1.57 (0.062)1.15 (0.045)HIGH VOLTAGE11.51 (0.453)POWER MOSFETS13.79 (0.543)11.61 (0.457)13.99 (0.551)0.46 (0.018)0.56 (0.022)1 2 33 plcs. 1.27 (0.050)1.40 (0.055)VDSS
sml20h45.pdf
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SML20H45TO258 Package Outline.Dimensions in mm (inches)6.86 (0.270)NCHANNEL6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)ENHANCEMENT MODE0.88 (0.035)HIGH VOLTAGEPOWER MOSFETS4.19 (0.165)3.94 (0.155)Dia.1 2 3VDSS 200VID(cont) 45ARDS(on) 0.0405.08 (0.200) 3.56 (0.140)BSC BSC Faster Switching1.65 (0.065)1.39 (0.055) Lower Le
sml20j97 sml20j97f.pdf
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SML20J97SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3V
sml20l100 sml20l100f.pdf
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SML20L100TO264AA Package Outline.Dimensions in mm (inches)1.80 (0.071)2.01 (0.079) NCHANNEL4.60 (0.181) 19.51 (0.768)5.21 (0.205) 26.49 (0.807)3.10 (0.122)ENHANCEMENT MODE3.48 (0.137)HIGH VOLTAGEPOWER MOSFETSVDSS 200V1 2 32.29 (0.090)ID(cont) 100A2.69 (0.106)2.79 (0.110)3.18 (0.125)RDS(on) 0.0220.48 (0.019) 0.76 (0.030)0.84 (0.033) 1.30 (0.051)
sml20t75.pdf
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SML20T75T247clip Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610)NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODE5.38 (0.212)6.20 (0.244)HIGH VOLTAGEPOWER MOSFETS2VDSS 200V1 2 32.87 (0.113)ID(cont) 100A0.40 (0.016)3.12 (0.123) 0.79 (0.031)1.65 (0.065)2.13 (0.084) RDS(on) 0.0221.01 (0.040)1.40 (0.05
sml20s56.pdf
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SML20S56D3PAK Package Outline.Dimensions in mm (inches)NCHANNEL4.98 (0.196)5.08 (0.200)ENHANCEMENT MODE15.95 (0.628) 13.41 (0.528)1.47 (0.058) 16.05 (0.632) 13.51 (0.532)1.04 (0.041)1.57 (0.062)1.15 (0.045)HIGH VOLTAGE11.51 (0.453)POWER MOSFETS13.79 (0.543)11.61 (0.457)13.99 (0.551)0.46 (0.018)0.56 (0.022)1 2 33 plcs. 1.27 (0.050)1.40 (0.055)VDSS
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Liste
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