SML20J175F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SML20J175F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 700 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 175 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Encapsulados: TO-257AA
Búsqueda de reemplazo de SML20J175F MOSFET
- Selecciónⓘ de transistores por parámetros
SML20J175F datasheet
sml20j175f.pdf
N-CHANNEL POWER MOSFET SML20J175 Fast Switching and Low leakage 100% Avalanche Tested Popular SOT-227 Package StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFET s. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieve faster switching speeds through optimised
sml20j175.pdf
SML20J175 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3
sml20j122.pdf
SML20J122 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3
sml20j97 sml20j97f.pdf
SML20J97 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3 V
Otros transistores... SML10B75F, SML1248NC2A, SML1248PC2A, SML1310IG, SML1310IGF, SML2005SMD1, SML20B56F, SML20B67F, IRFB4227, SML20J97F, SML20L100F, SML2308CSM4, SML25SCM650N2A, SML25SCM650N2B, SML2955CSM4, SML30B40F, SML30B48F
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH
Popular searches
mn2488 | irfb438 | mj21193g | irf3710 pinout | irf9530 datasheet | mj21194 | oc71 transistor | 2n3440
