SML80B16F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SML80B16F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 370 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 370 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.56 Ohm

Encapsulados: TO-247AD

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SML80B16F datasheet

 ..1. Size:54K  semelab
 sml80b16f.pdf pdf_icon

SML80B16F

SML80B16F TO 247AD Package Outline. N CHANNEL Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) ENHANCEMENT MODE 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) VDSS 800V 1 2 3 ID(cont) 16A 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) 0.79 (0.031) 2.87 (0.113) RDS(on) 0.560 3.12 (0.123) 1.01 (0.040) 1.40 (0

 6.1. Size:21K  semelab
 sml80b16.pdf pdf_icon

SML80B16F

SML80B16 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 800V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 16A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.560 2.21

 7.1. Size:25K  semelab
 sml80b13f.pdf pdf_icon

SML80B16F

SML80B13F TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 800V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 13A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.650 2.2

 7.2. Size:21K  semelab
 sml80b13.pdf pdf_icon

SML80B16F

SML80B13 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 800V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 13A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.650 2.21

MOSTRAR MÁS

Otros transistores... SML50L47F, SML6609ASMD05, SML8028JVR, SML8030LVR, SML8056BVR, SML8065BVR, SML8075BVR, SML80B13F, AON6380, SML80J25F, SML80J44F, SML80L27F, SML901R1AN, SML901R1HN, SML901R3AN, SML902R4BN, SML902RBN