SML80B16F Specs and Replacement

Type Designator: SML80B16F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 370 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.56 Ohm

Package: TO-247AD

SML80B16F substitution

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SML80B16F datasheet

 ..1. Size:54K  semelab
 sml80b16f.pdf pdf_icon

SML80B16F

SML80B16F TO 247AD Package Outline. N CHANNEL Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) ENHANCEMENT MODE 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) VDSS 800V 1 2 3 ID(cont) 16A 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) 0.79 (0.031) 2.87 (0.113) RDS(on) 0.560 3.12 (0.123) 1.01 (0.040) 1.40 (0... See More ⇒

 6.1. Size:21K  semelab
 sml80b16.pdf pdf_icon

SML80B16F

SML80B16 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 800V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 16A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.560 2.21... See More ⇒

 7.1. Size:25K  semelab
 sml80b13f.pdf pdf_icon

SML80B16F

SML80B13F TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 800V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 13A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.650 2.2... See More ⇒

 7.2. Size:21K  semelab
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SML80B16F

SML80B13 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 800V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 13A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.650 2.21... See More ⇒

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Detailed specifications: SML50L47F, SML6609ASMD05, SML8028JVR, SML8030LVR, SML8056BVR, SML8065BVR, SML8075BVR, SML80B13F, AON6380, SML80J25F, SML80J44F, SML80L27F, SML901R1AN, SML901R1HN, SML901R3AN, SML902R4BN, SML902RBN

Keywords - SML80B16F MOSFET specs

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