VP0109 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VP0109
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 90 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 22 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
Encapsulados: TO-92
Búsqueda de reemplazo de VP0109 MOSFET
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VP0109 datasheet
vp0109.pdf
Supertex inc. VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power
vp0104.pdf
Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power
vp0106.pdf
Supertex inc. VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power
Otros transistores... VNS009A, VNS009D, VNT008A, VNT008D, VNT009A, VNT009D, VP0104, VP0106, IRF540N, VP0550, VP0808, VP1008CSM4, VP2106, VP2110, VP2206N2, VP2206N3, VP2450N3
History: STB70NFS03L | SSW65R190S2 | 2SK2834-01
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