VP0109 Datasheet and Replacement
Type Designator: VP0109
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 22 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: TO-92
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VP0109 Datasheet (PDF)
vp0109.pdf
Supertex inc. VP0109P-Channel Enhancement-ModeVertical DMOS FETsFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power
vp0104.pdf
Supertex inc. VP0104P-Channel Enhancement-ModeVertical DMOS FETsFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power
vp0106.pdf
Supertex inc. VP0106P-Channel Enhancement-ModeVertical DMOS FETsFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: ZXMN2F30FHTA | HLML6401 | SDF08N60 | IRFH8330 | NVD4809N | SSF1016 | AP85T03GH-HF
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History: ZXMN2F30FHTA | HLML6401 | SDF08N60 | IRFH8330 | NVD4809N | SSF1016 | AP85T03GH-HF
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