VP2106 Todos los transistores

 ..1. Size:626K  supertex
 vp2106.pdf

Supertex inc. VP2106 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power

 0.1. Size:41K  diodes
 zvp2106astob zvp2106astz zvp2106as zvp2106astoa.pdf

P-CHANNEL ENHANCEMENT ZVP2106A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=5 VGS= -10V D -9V G S -8V E-Line -7V TO92 Compatible -6V ABSOLUTE MAXIMUM RATINGS. -5V PARAMETER SYMBOL VALUE UNIT -4V -3.5V Drain-Source Voltage VDS -60 V -8 -10 Continuous Drain Current at Tamb=25 C ID -280 mA Pulsed Drain Current IDM -4 A Gate Source V

 0.2. Size:53K  diodes
 zvp2106a.pdf

P-CHANNEL ENHANCEMENT ZVP2106A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=5 VGS= -10V D -9V G S -8V E-Line -7V TO92 Compatible -6V ABSOLUTE MAXIMUM RATINGS. -5V PARAMETER SYMBOL VALUE UNIT -4V -3.5V Drain-Source Voltage VDS -60 V -8 -10 Continuous Drain Current at Tamb=25 C ID -280 mA Pulsed Drain Current IDM -4 A Gate Source V

 0.3. Size:77K  diodes
 zvp2106g.pdf

SOT223 P-CHANNEL ENHANCEMENT 6G ZVP2106G MODE VERTICAL DMOS FET ISSUE 3 MARCH 96 T D V I VD D VGS= S -10V T I D T I V -9V T T V D -8V G -7V ABSOLUTE MAXIMUM RATINGS. -6V T V IT -5V -4V D i V I VD V -3.5V i D i T ID -8 -10 I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated).

 0.4. Size:15K  diodes
 zvp2106b.pdf

ZVP2106B MECHANICAL DATA P CHANNEL ENHANCEMENT Dimensions in mm (inches) MODE DMOS FET BVDSS - 60V 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) ID(cont) 0.76A 8.51 (0.335) RDS(on) 0.5 4.19 (0.165) 4.95 (0.195) 0.89 max. (0.035) 12.70 (0.500) 7.75 (0.305) min. 8.51 (0.335) dia. FEATURES 5.08 (0.200) typ. FAST SWITCHING SPEEDS 2.54 2 (0.100) 1 3 NO SECONDARY

 0.5. Size:61K  diodes
 zvp2106gta zvp2106gtc.pdf

SOT223 P-CHANNEL ENHANCEMENT 6G ZVP2106G MODE VERTICAL DMOS FET ISSUE 3 MARCH 96 T D V I VD D VGS= S -10V T I D T I V -9V T T V D -8V G -7V ABSOLUTE MAXIMUM RATINGS. -6V T V IT -5V -4V D i V I VD V -3.5V i D i T ID -8 -10 I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated).