IXTM14N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXTM14N80
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
Paquete / Cubierta: TO204

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IXTM14N80 Datasheet (PDF)

9.1. Size:105K ixys
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

9.2. Size:316K ixys
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf

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9.3. Size:64K ixys
ixth10n60 ixth10n60a ixtm10n60 ixtm10n60a.pdf

9.4. Size:98K ixys
ixth11n80 ixtm11n80 ixth13n80 ixtm13n80.pdf

VDSS ID25 RDS(on)IXTH / IXTM 11N80 800 V 11 A 0.95 MegaMOSTMFETIXTH / IXTM 13N80 800 V 13 A 0.80 N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 11N80 11

9.5. Size:62K ixys
ixth12n50a ixtm12n50a.pdf

VDSS ID25 RDS(on)StandardIXTH 12 N50A 500 V 12 A 0.4 Power MOSFETIXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C12 AIDM TC

9.6. Size:65K ixys
ixth12n45 ixth12n45a ixth12n50 ixtm12n45 ixtm12n45a ixtm12n50.pdf