HFB1N70S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFB1N70S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 0.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 22 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 17.5 Ohm

Encapsulados: TO-92

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HFB1N70S datasheet

 ..1. Size:226K  semihow
 hfb1n70s.pdf pdf_icon

HFB1N70S

Dec 2012 BVDSS = 700 V RDS(on) typ HFB1N70S ID = 0.3 A 700V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 3.5 nC (Typ.) Extended Safe Operating Area

 9.1. Size:238K  semihow
 hfb1n65s.pdf pdf_icon

HFB1N70S

Dec 2012 BVDSS = 650 V RDS(on) typ HFB1N65S ID = 0.3 A 650V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 3.0 nC (Typ.) Extended Safe Operating Area

 9.2. Size:238K  semihow
 hfb1n60s.pdf pdf_icon

HFB1N70S

Sep 2009 BVDSS = 600 V RDS(on) typ HFB1N60S ID = 0.3 A 600V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 3.0 nC (Typ.) Extended Safe Operating Area

 9.3. Size:185K  semihow
 hfb1n60f.pdf pdf_icon

HFB1N70S

Oct 2016 HFB1N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 1A Excellent Switching Characteristics RDS(on), Typ 6.5 100% Avalanche Tested Qg, Typ 3.7 nC RoHS Compliant TO-92 Symbol S D G Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value Uni

MOSTRAR MÁS

Otros transistores... HCS20NT60V, HCT7000M, HCT7000MTXV, HCU6N70S, HCU7NE70S, HFA9N90, HFB1N60S, HFB1N65S, IRF1407, HFD1N60S, HFD1N65S, HFD2N60, HFD2N60S, HFD2N60U, HFD2N65S, HFD2N65U, HFD2N70S