All MOSFET. HFB1N70S Datasheet

 

HFB1N70S Datasheet and Replacement


   Type Designator: HFB1N70S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 3.5 nC
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 17.5 Ohm
   Package: TO-92
 

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HFB1N70S Datasheet (PDF)

 ..1. Size:226K  semihow
 hfb1n70s.pdf pdf_icon

HFB1N70S

Dec 2012BVDSS = 700 VRDS(on) typ HFB1N70SID = 0.3 A700V N-Channel MOSFETTO-92FEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge : 3.5 nC (Typ.) Extended Safe Operating Area

 9.1. Size:238K  semihow
 hfb1n65s.pdf pdf_icon

HFB1N70S

Dec 2012BVDSS = 650 VRDS(on) typ HFB1N65SID = 0.3 A650V N-Channel MOSFETTO-92FEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area

 9.2. Size:238K  semihow
 hfb1n60s.pdf pdf_icon

HFB1N70S

Sep 2009BVDSS = 600 VRDS(on) typ HFB1N60SID = 0.3 A600V N-Channel MOSFETTO-92FEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area

 9.3. Size:185K  semihow
 hfb1n60f.pdf pdf_icon

HFB1N70S

Oct 2016HFB1N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 1A Excellent Switching CharacteristicsRDS(on), Typ 6.5 100% Avalanche TestedQg, Typ 3.7 nC RoHS CompliantTO-92 SymbolSDGAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter Value Uni

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Keywords - HFB1N70S MOSFET datasheet

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