HFD1N65S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFD1N65S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 0.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 22 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 13.5 Ohm
Paquete / Cubierta: D-PAK
Búsqueda de reemplazo de HFD1N65S MOSFET
HFD1N65S datasheet
hfd1n65s.pdf
April 2009 BVDSS = 650 V RDS(on) typ HFD1N65S / HFU1N65S ID = 0.9 A 650V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD1N65S HFU1N65S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge ... See More ⇒
hfu1n60f hfd1n60f.pdf
Oct 2016 HFU1N60F / HFD1N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 1A Excellent Switching Characteristics RDS(on), Typ 6.5 100% Avalanche Tested Qg, Typ 3.7 nC RoHS Compliant HFU1N60F HFD1N60F Symbol TO-251 TO-252 D S S D G G Absolute Maximum Ratings TC=25 unless... See More ⇒
hfd1n60s hfu1n60s.pdf
Sep 2009 BVDSS = 600 V RDS(on) typ HFD1N60S / HFU1N60S ID = 1.0 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD1N60S HFU1N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 3.0 nC (T... See More ⇒
hfd1n60s.pdf
Sep 2009 BVDSS = 600 V RDS(on) typ HFD1N60S / HFU1N60S ID = 1.0 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD1N60S HFU1N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 3.0 nC (T... See More ⇒
Otros transistores... HCT7000MTXV , HCU6N70S , HCU7NE70S , HFA9N90 , HFB1N60S , HFB1N65S , HFB1N70S , HFD1N60S , 5N60 , HFD2N60 , HFD2N60S , HFD2N60U , HFD2N65S , HFD2N65U , HFD2N70S , HFD2N90 , HFD3N80 .
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