HFD2N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFD2N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: D-PAK

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HFD2N60 datasheet

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 hfd2n60.pdf pdf_icon

HFD2N60

July 2005 BVDSS = 600 V RDS(on) typ HFD2N60 / HFU2N60 ID = 1.8 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD2N60 HFU2N60 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 9.0 nC (Typ

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 hfd2n60u hfu2n60u.pdf pdf_icon

HFD2N60

June 2015 BVDSS = 600 V RDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (T

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 hfd2n60u.pdf pdf_icon

HFD2N60

Jan 2014 BVDSS = 600 V RDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (Ty

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 hfd2n60s.pdf pdf_icon

HFD2N60

March 2014 BVDSS = 600 V RDS(on) typ HFD2N60S / HFU2N60S ID = 1.9 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD2N60S HFU2N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 6.0 nC

MOSTRAR MÁS

Otros transistores... HCU6N70S, HCU7NE70S, HFA9N90, HFB1N60S, HFB1N65S, HFB1N70S, HFD1N60S, HFD1N65S, RFP50N06, HFD2N60S, HFD2N60U, HFD2N65S, HFD2N65U, HFD2N70S, HFD2N90, HFD3N80, HFD4N50