HFD2N65U MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFD2N65U
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 38 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6.5 Ohm
Paquete / Cubierta: D-PAK
Búsqueda de reemplazo de HFD2N65U MOSFET
HFD2N65U datasheet
hfd2n65u.pdf
Nov 2013 BVDSS = 650 V RDS(on) typ = 5 HFD2N65U / HFU2N65U ID = 1.8 A 650V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD2N65U HFU2N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (Ty... See More ⇒
hfd2n65s.pdf
Mar 2010 BVDSS = 650 V RDS(on) typ = 5.0 HFD2N65S / HFU2N65S ID = 1.6 A 650V N-Channel MOSFET D-PAK I-PAK 2 2 FEATURES 1 1 3 2 3 Originative New Design HFD2N65S HFU2N65S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 6.0 nC (Typ.... See More ⇒
hfd2n60u hfu2n60u.pdf
June 2015 BVDSS = 600 V RDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (T... See More ⇒
hfd2n60u.pdf
Jan 2014 BVDSS = 600 V RDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (Ty... See More ⇒
Otros transistores... HFB1N65S , HFB1N70S , HFD1N60S , HFD1N65S , HFD2N60 , HFD2N60S , HFD2N60U , HFD2N65S , 20N50 , HFD2N70S , HFD2N90 , HFD3N80 , HFD4N50 , HFD5N40 , HFD5N50S , HFD5N50U , HFD5N60S .
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