HFD2N65U Specs and Replacement
Type Designator: HFD2N65U
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 38 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
Package: D-PAK
HFD2N65U substitution
- MOSFET ⓘ Cross-Reference Search
HFD2N65U datasheet
hfd2n65u.pdf
Nov 2013 BVDSS = 650 V RDS(on) typ = 5 HFD2N65U / HFU2N65U ID = 1.8 A 650V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD2N65U HFU2N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (Ty... See More ⇒
hfd2n65s.pdf
Mar 2010 BVDSS = 650 V RDS(on) typ = 5.0 HFD2N65S / HFU2N65S ID = 1.6 A 650V N-Channel MOSFET D-PAK I-PAK 2 2 FEATURES 1 1 3 2 3 Originative New Design HFD2N65S HFU2N65S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 6.0 nC (Typ.... See More ⇒
hfd2n60u hfu2n60u.pdf
June 2015 BVDSS = 600 V RDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (T... See More ⇒
hfd2n60u.pdf
Jan 2014 BVDSS = 600 V RDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (Ty... See More ⇒
Detailed specifications: HFB1N65S, HFB1N70S, HFD1N60S, HFD1N65S, HFD2N60, HFD2N60S, HFD2N60U, HFD2N65S, 20N50, HFD2N70S, HFD2N90, HFD3N80, HFD4N50, HFD5N40, HFD5N50S, HFD5N50U, HFD5N60S
Keywords - HFD2N65U MOSFET specs
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