HFD2N70S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFD2N70S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 38 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 30 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm
Paquete / Cubierta: D-PAK
Búsqueda de reemplazo de HFD2N70S MOSFET
HFD2N70S PDF Specs
hfd2n70s.pdf
Dec 2009 BVDSS = 700 V RDS(on) typ = 5.0 HFD2N70S / HFU2N70S ID = 1.5 A 700V N-Channel MOSFET D-PAK I-PAK 2 2 FEATURES 1 1 3 2 3 Originative New Design HFD2N70S HFU2N70S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 6.2 nC (Typ.... See More ⇒
hfd2n60u hfu2n60u.pdf
June 2015 BVDSS = 600 V RDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (T... See More ⇒
hfd2n60u.pdf
Jan 2014 BVDSS = 600 V RDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (Ty... See More ⇒
hfd2n65s.pdf
Mar 2010 BVDSS = 650 V RDS(on) typ = 5.0 HFD2N65S / HFU2N65S ID = 1.6 A 650V N-Channel MOSFET D-PAK I-PAK 2 2 FEATURES 1 1 3 2 3 Originative New Design HFD2N65S HFU2N65S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 6.0 nC (Typ.... See More ⇒
Otros transistores... HFB1N70S , HFD1N60S , HFD1N65S , HFD2N60 , HFD2N60S , HFD2N60U , HFD2N65S , HFD2N65U , IRF520 , HFD2N90 , HFD3N80 , HFD4N50 , HFD5N40 , HFD5N50S , HFD5N50U , HFD5N60S , HFD5N60U .
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