All MOSFET. HFD2N70S Datasheet

 

HFD2N70S Datasheet and Replacement


   Type Designator: HFD2N70S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
   Package: D-PAK
 

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HFD2N70S Datasheet (PDF)

 ..1. Size:233K  semihow
 hfd2n70s.pdf pdf_icon

HFD2N70S

Dec 2009BVDSS = 700 VRDS(on) typ = 5.0 HFD2N70S / HFU2N70SID = 1.5 A700V N-Channel MOSFETD-PAK I-PAK22FEATURES113 23 Originative New DesignHFD2N70S HFU2N70S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.2 nC (Typ.

 9.1. Size:381K  semihow
 hfd2n60u hfu2n60u.pdf pdf_icon

HFD2N70S

June 2015BVDSS = 600 VRDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (T

 9.2. Size:199K  semihow
 hfd2n60u.pdf pdf_icon

HFD2N70S

Jan 2014BVDSS = 600 VRDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Ty

 9.3. Size:257K  semihow
 hfd2n65s.pdf pdf_icon

HFD2N70S

Mar 2010BVDSS = 650 VRDS(on) typ = 5.0 HFD2N65S / HFU2N65SID = 1.6 A650V N-Channel MOSFETD-PAK I-PAK22FEATURES113 23 Originative New DesignHFD2N65S HFU2N65S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.

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Datasheet: HFB1N70S , HFD1N60S , HFD1N65S , HFD2N60 , HFD2N60S , HFD2N60U , HFD2N65S , HFD2N65U , CS150N03A8 , HFD2N90 , HFD3N80 , HFD4N50 , HFD5N40 , HFD5N50S , HFD5N50U , HFD5N60S , HFD5N60U .

History: SM6008NF | 2SK1813

Keywords - HFD2N70S MOSFET datasheet

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