HFD5N65S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFD5N65S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 91 W
Tensión drenaje-fuente (Vds): 650 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4.5 V
Carga de compuerta (Qg): 10.5 nC
Tiempo de elevación (tr): 45 nS
Conductancia de drenaje-sustrato (Cd): 60 pF
Resistencia drenaje-fuente RDS(on): 2.9 Ohm
Empaquetado / Estuche: D-PAK
Búsqueda de reemplazo de MOSFET HFD5N65S
HFD5N65S Datasheet (PDF)
1.1. hfd5n65s.pdf 
Size:204K _update_mosfet
Mar 2010 BVDSS = 650 V RDS(on) typ = 2.3 HFD5N65S / HFU5N65S ID = 4.0 A 650V N-Channel MOSFET D-PAK I-PAK 2 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N65S HFU5N65S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ
3.1. hfd5n65u.pdf Size:209K _update_mosfet
Jan 2014 BVDSS = 650 V RDS(on) typ = 2.3 HFD5N65U / HFU5N65U ID = 3.6 A 650V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N65U HFU5N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC
4.1. hfd5n60u.pdf Size:210K _update_mosfet
Jan 2014 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60U / HFU5N60U ID = 3.6 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N60U HFU5N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC
4.2. hfd5n60s.pdf Size:205K _update_mosfet
Sep 2009 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60S / HFU5N60S ID = 4.3 A 600V N-Channel MOSFET D-PAK I-PAK 2 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N60S HFU5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
