All MOSFET. HFD5N65S Datasheet

 

HFD5N65S Datasheet and Replacement


   Type Designator: HFD5N65S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 91 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm
   Package: D-PAK
 

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HFD5N65S Datasheet (PDF)

 ..1. Size:204K  semihow
 hfd5n65s.pdf pdf_icon

HFD5N65S

Mar 2010BVDSS = 650 VRDS(on) typ = 2.3 HFD5N65S / HFU5N65SID = 4.0 A650V N-Channel MOSFETD-PAK I-PAK22FEATURES113 23 Originative New DesignHFD5N65S HFU5N65S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ

 0.1. Size:1121K  semihow
 hfu5n65sa hfd5n65sa.pdf pdf_icon

HFD5N65S

May. 2022HFU5N65SA / HFD5N65SA650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 4.2 A Excellent Switching CharacteristicsRDS(on), Typ 2.3 100% Avalanche TestedQg, Typ 14.2 nC RoHS CompliantHFU5N65SA HFD5N65SASymbolTO

 7.1. Size:209K  semihow
 hfd5n65u.pdf pdf_icon

HFD5N65S

Jan 2014BVDSS = 650 VRDS(on) typ = 2.3 HFD5N65U / HFU5N65U ID = 3.6 A650V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD5N65U HFU5N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC

 8.1. Size:205K  semihow
 hfd5n60s.pdf pdf_icon

HFD5N65S

Sep 2009BVDSS = 600 VRDS(on) typ = 2.0 HFD5N60S / HFU5N60SID = 4.3 A600V N-Channel MOSFETD-PAK I-PAK22FEATURES113 23 Originative New DesignHFD5N60S HFU5N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ

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Datasheet: HFD2N90 , HFD3N80 , HFD4N50 , HFD5N40 , HFD5N50S , HFD5N50U , HFD5N60S , HFD5N60U , IRFB31N20D , HFD5N65U , HFD5N70S , HFD5N70U , HFD630 , HFD6N60U , HFD6N65U , HFD6N70U , HFD8N60U .

History: IPAN60R600P7S

Keywords - HFD5N65S MOSFET datasheet

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