HFP10N60U Todos los transistores

 

HFP10N60U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFP10N60U
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 164 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO-220
 

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HFP10N60U Datasheet (PDF)

 ..1. Size:201K  semihow
 hfp10n60u.pdf pdf_icon

HFP10N60U

Feb 2013BVDSS = 600 VRDS(on) typ = 0.67 HFP10N60U ID = 9.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lo

 6.1. Size:189K  semihow
 hfp10n60s.pdf pdf_icon

HFP10N60U

Nov 2007BVDSS = 600 VRDS(on) typ HFP10N60SID = 9.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(

 7.1. Size:172K  semihow
 hfp10n65s.pdf pdf_icon

HFP10N60U

March 2014BVDSS = 650 VRDS(on) typ HFP10N65SID = 9.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L

 7.2. Size:201K  semihow
 hfp10n65u.pdf pdf_icon

HFP10N60U

March 2013BVDSS = 650 VRDS(on) typ = 0.8 HFP10N65U ID = 9.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L

MOSTRAR MÁS

Otros transistores... HFH18N50S , HFH19N60 , HFH6N90 , HFH7N80 , HFI50N06 , HFI640 , HFN6N70U , HFP10N60S , IRF3205 , HFP10N65S , HFP10N65U , HFP10N80 , HFP11N40 , HFP12N60S , HFP12N60U , HFP12N65S , HFP12N65U .

History: HMS21N60A | AP60SL650AFI | IPB049N08N5 | TSM3N80CP | 2SK1890 | 2SK1806 | DH1K1N10B

 

 
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