All MOSFET. HFP10N60U Datasheet

 

HFP10N60U MOSFET. Datasheet pdf. Equivalent


   Type Designator: HFP10N60U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 164 W
   Maximum Drain-Source Voltage |Vds|: 600 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
   Maximum Drain Current |Id|: 9.5 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 29 nC
   Rise Time (tr): 70 nS
   Drain-Source Capacitance (Cd): 140 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
   Package: TO-220

 HFP10N60U Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFP10N60U Datasheet (PDF)

 ..1. Size:201K  semihow
 hfp10n60u.pdf

HFP10N60U HFP10N60U

Feb 2013BVDSS = 600 VRDS(on) typ = 0.67 HFP10N60U ID = 9.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lo

 6.1. Size:189K  semihow
 hfp10n60s.pdf

HFP10N60U HFP10N60U

Nov 2007BVDSS = 600 VRDS(on) typ HFP10N60SID = 9.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(

 7.1. Size:172K  semihow
 hfp10n65s.pdf

HFP10N60U HFP10N60U

March 2014BVDSS = 650 VRDS(on) typ HFP10N65SID = 9.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L

 7.2. Size:201K  semihow
 hfp10n65u.pdf

HFP10N60U HFP10N60U

March 2013BVDSS = 650 VRDS(on) typ = 0.8 HFP10N65U ID = 9.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFP150N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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