HFP12N60S Todos los transistores

 

HFP12N60S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFP12N60S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 225 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 85 nS
   Cossⓘ - Capacitancia de salida: 185 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
   Paquete / Cubierta: TO-220
 

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HFP12N60S Datasheet (PDF)

 ..1. Size:255K  semihow
 hfp12n60s.pdf pdf_icon

HFP12N60S

Nov 2007BVDSS = 600 VRDS(on) typ = 0.53 HFP12N60SID = 12 A600V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) Ext

 6.1. Size:171K  semihow
 hfp12n60u.pdf pdf_icon

HFP12N60S

July 2014BVDSS = 600 VRDS(on) typ = 0.53 HFP12N60U ID = 12 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

 7.1. Size:246K  semihow
 hfp12n65s.pdf pdf_icon

HFP12N60S

Aug 2009BVDSS = 650 VRDS(on) typ = 0.67 HFP12N65SID = 12 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) Ext

 7.2. Size:173K  semihow
 hfp12n65u.pdf pdf_icon

HFP12N60S

July 2014BVDSS = 650 VRDS(on) typ = 0.67 HFP12N65U ID = 12 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

MOSTRAR MÁS

Otros transistores... HFI640 , HFN6N70U , HFP10N60S , HFP10N60U , HFP10N65S , HFP10N65U , HFP10N80 , HFP11N40 , IRF540N , HFP12N60U , HFP12N65S , HFP12N65U , HFP13N50S , HFP13N50U , HFP13N60U , HFP13N65U , HFP18N50U .

History: 2SK3575-Z | CEB73A3G | 4N65D | HTN027N03P | SVS11N65T | BSC072N08NS5 | 15NM70G-TM3-T

 

 
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