All MOSFET. HFP12N60S Datasheet

 

HFP12N60S Datasheet and Replacement


   Type Designator: HFP12N60S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO-220
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HFP12N60S Datasheet (PDF)

 ..1. Size:255K  semihow
 hfp12n60s.pdf pdf_icon

HFP12N60S

Nov 2007BVDSS = 600 VRDS(on) typ = 0.53 HFP12N60SID = 12 A600V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) Ext

 6.1. Size:171K  semihow
 hfp12n60u.pdf pdf_icon

HFP12N60S

July 2014BVDSS = 600 VRDS(on) typ = 0.53 HFP12N60U ID = 12 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

 7.1. Size:246K  semihow
 hfp12n65s.pdf pdf_icon

HFP12N60S

Aug 2009BVDSS = 650 VRDS(on) typ = 0.67 HFP12N65SID = 12 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) Ext

 7.2. Size:173K  semihow
 hfp12n65u.pdf pdf_icon

HFP12N60S

July 2014BVDSS = 650 VRDS(on) typ = 0.67 HFP12N65U ID = 12 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lo

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History: TK2P60D | IRFBG20

Keywords - HFP12N60S MOSFET datasheet

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