HFP13N50S Todos los transistores

 

HFP13N50S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFP13N50S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 195 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 205 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm
   Paquete / Cubierta: TO-220
 

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HFP13N50S datasheet

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 hfp13n50s.pdf pdf_icon

HFP13N50S

March 2014 BVDSS = 500 V RDS(on) typ HFP13N50S ID = 13 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Extended Safe Operating Area L

 6.1. Size:500K  shantou-huashan
 hfp13n50.pdf pdf_icon

HFP13N50S

Shantou Huashan Electronic Devices Co.,Ltd. HFP13N50 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

 6.2. Size:163K  semihow
 hfp13n50u.pdf pdf_icon

HFP13N50S

Nov 2013 BVDSS = 500 V RDS(on) typ = 0.39 HFP13N50U ID = 13 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 34 nC (Typ.) Extended Safe Operating Area Low

 8.1. Size:535K  shantou-huashan
 hfp13n10.pdf pdf_icon

HFP13N50S

Shantou Huashan Electronic Devices Co.,Ltd. HFP13N10 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

MOSTRAR MÁS

Otros transistores... HFP10N65S , HFP10N65U , HFP10N80 , HFP11N40 , HFP12N60S , HFP12N60U , HFP12N65S , HFP12N65U , IRF640 , HFP13N50U , HFP13N60U , HFP13N65U , HFP18N50U , HFP2N60S , HFP2N60U , HFP2N65S , HFP2N65U .

 

 
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