HFP13N50S. Аналоги и основные параметры

Наименование производителя: HFP13N50S

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 195 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 13 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 100 ns

Cossⓘ - Выходная емкость: 205 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.48 Ohm

Тип корпуса: TO-220

Аналог (замена) для HFP13N50S

- подборⓘ MOSFET транзистора по параметрам

 

HFP13N50S даташит

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HFP13N50S

March 2014 BVDSS = 500 V RDS(on) typ HFP13N50S ID = 13 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Extended Safe Operating Area L

 6.1. Size:500K  shantou-huashan
 hfp13n50.pdf pdf_icon

HFP13N50S

Shantou Huashan Electronic Devices Co.,Ltd. HFP13N50 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

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 hfp13n50u.pdf pdf_icon

HFP13N50S

Nov 2013 BVDSS = 500 V RDS(on) typ = 0.39 HFP13N50U ID = 13 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 34 nC (Typ.) Extended Safe Operating Area Low

 8.1. Size:535K  shantou-huashan
 hfp13n10.pdf pdf_icon

HFP13N50S

Shantou Huashan Electronic Devices Co.,Ltd. HFP13N10 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

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Другие IGBT... HFP10N65S, HFP10N65U, HFP10N80, HFP11N40, HFP12N60S, HFP12N60U, HFP12N65S, HFP12N65U, IRF640, HFP13N50U, HFP13N60U, HFP13N65U, HFP18N50U, HFP2N60S, HFP2N60U, HFP2N65S, HFP2N65U