HFP13N50U MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFP13N50U

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 187 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm

Encapsulados: TO-220

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HFP13N50U datasheet

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HFP13N50U

Nov 2013 BVDSS = 500 V RDS(on) typ = 0.39 HFP13N50U ID = 13 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 34 nC (Typ.) Extended Safe Operating Area Low

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HFP13N50U

Shantou Huashan Electronic Devices Co.,Ltd. HFP13N50 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

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 hfp13n50s.pdf pdf_icon

HFP13N50U

March 2014 BVDSS = 500 V RDS(on) typ HFP13N50S ID = 13 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Extended Safe Operating Area L

 8.1. Size:535K  shantou-huashan
 hfp13n10.pdf pdf_icon

HFP13N50U

Shantou Huashan Electronic Devices Co.,Ltd. HFP13N10 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

MOSTRAR MÁS

Otros transistores... HFP10N65U, HFP10N80, HFP11N40, HFP12N60S, HFP12N60U, HFP12N65S, HFP12N65U, HFP13N50S, IRF1404, HFP13N60U, HFP13N65U, HFP18N50U, HFP2N60S, HFP2N60U, HFP2N65S, HFP2N65U, HFP2N70S