HFP13N60U MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFP13N60U

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 230 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 90 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.41 Ohm

Encapsulados: TO-220

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HFP13N60U datasheet

 ..1. Size:195K  semihow
 hfp13n60u.pdf pdf_icon

HFP13N60U

Sep 2012 BVDSS = 600 V RDS(on) typ = 0.33 HFP13N60U ID = 14.0 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 60.0 nC (Typ.) Extended Safe Operating Area

 7.1. Size:194K  semihow
 hfp13n65u.pdf pdf_icon

HFP13N60U

March 2013 BVDSS = 650 V RDS(on) typ = 0.4 HFP13N65U ID = 14.0 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 60.0 nC (Typ.) Extended Safe Operating Area

 8.1. Size:500K  shantou-huashan
 hfp13n50.pdf pdf_icon

HFP13N60U

Shantou Huashan Electronic Devices Co.,Ltd. HFP13N50 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

 8.2. Size:535K  shantou-huashan
 hfp13n10.pdf pdf_icon

HFP13N60U

Shantou Huashan Electronic Devices Co.,Ltd. HFP13N10 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

MOSTRAR MÁS

Otros transistores... HFP10N80, HFP11N40, HFP12N60S, HFP12N60U, HFP12N65S, HFP12N65U, HFP13N50S, HFP13N50U, IRLZ44N, HFP13N65U, HFP18N50U, HFP2N60S, HFP2N60U, HFP2N65S, HFP2N65U, HFP2N70S, HFP2N90