HFP13N60U Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HFP13N60U
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 230 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 90 ns
Cossⓘ - Выходная емкость: 250 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.41 Ohm
Тип корпуса: TO-220
Аналог (замена) для HFP13N60U
HFP13N60U Datasheet (PDF)
hfp13n60u.pdf

Sep 2012BVDSS = 600 VRDS(on) typ = 0.33 HFP13N60U ID = 14.0 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ.) Extended Safe Operating Area
hfp13n65u.pdf

March 2013BVDSS = 650 VRDS(on) typ = 0.4 HFP13N65U ID = 14.0 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ.) Extended Safe Operating Area
hfp13n50.pdf

Shantou Huashan Electronic Devices Co.,Ltd. HFP13N50 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan
hfp13n10.pdf

Shantou Huashan Electronic Devices Co.,Ltd. HFP13N10 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan
Другие MOSFET... HFP10N80 , HFP11N40 , HFP12N60S , HFP12N60U , HFP12N65S , HFP12N65U , HFP13N50S , HFP13N50U , IRFP260N , HFP13N65U , HFP18N50U , HFP2N60S , HFP2N60U , HFP2N65S , HFP2N65U , HFP2N70S , HFP2N90 .
History: GP1M006A065XH | BLS65R560-A | CS6N60A4TY | SLP5N50S | S-LN2312LT1G | AM3456NE | SMC8810
History: GP1M006A065XH | BLS65R560-A | CS6N60A4TY | SLP5N50S | S-LN2312LT1G | AM3456NE | SMC8810



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