HFP13N60U - аналоги и даташиты транзистора

 

HFP13N60U - Даташиты. Аналоги. Основные параметры


   Наименование производителя: HFP13N60U
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 230 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 90 ns
   Cossⓘ - Выходная емкость: 250 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.41 Ohm
   Тип корпуса: TO-220
 
   - подбор ⓘ MOSFET транзистора по параметрам

 

HFP13N60U Datasheet (PDF)

 ..1. Size:195K  semihow
 hfp13n60u.pdf pdf_icon

HFP13N60U

Sep 2012BVDSS = 600 VRDS(on) typ = 0.33 HFP13N60U ID = 14.0 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ.) Extended Safe Operating Area

 7.1. Size:194K  semihow
 hfp13n65u.pdf pdf_icon

HFP13N60U

March 2013BVDSS = 650 VRDS(on) typ = 0.4 HFP13N65U ID = 14.0 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ.) Extended Safe Operating Area

 8.1. Size:500K  shantou-huashan
 hfp13n50.pdf pdf_icon

HFP13N60U

Shantou Huashan Electronic Devices Co.,Ltd. HFP13N50 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

 8.2. Size:535K  shantou-huashan
 hfp13n10.pdf pdf_icon

HFP13N60U

Shantou Huashan Electronic Devices Co.,Ltd. HFP13N10 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

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Другие MOSFET... HFP10N80 , HFP11N40 , HFP12N60S , HFP12N60U , HFP12N65S , HFP12N65U , HFP13N50S , HFP13N50U , IRFP260N , HFP13N65U , HFP18N50U , HFP2N60S , HFP2N60U , HFP2N65S , HFP2N65U , HFP2N70S , HFP2N90 .

 

 
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