HFP2N90 Todos los transistores

 

HFP2N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFP2N90

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 107 W

Tensión drenaje-fuente (Vds): 900 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 2.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Carga de compuerta (Qg): 17 nC

Tiempo de elevación (tr): 55 nS

Conductancia de drenaje-sustrato (Cd): 70 pF

Resistencia drenaje-fuente RDS(on): 5.6 Ohm

Empaquetado / Estuche: TO-220

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HFP2N90 Datasheet (PDF)

1.1. hfp2n90.pdf Size:212K _update_mosfet

HFP2N90
HFP2N90

Feb 2014 BVDSS = 900 V RDS(on) typ HFP2N90 ID = 2.2 A 900V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lower

5.1. hfp2n65u.pdf Size:191K _update_mosfet

HFP2N90
HFP2N90

Nov 2013 BVDSS = 650 V RDS(on) typ = 5 HFP2N65U ID = 2 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower R

5.2. hfp2n65s.pdf Size:191K _update_mosfet

HFP2N90
HFP2N90

Sep 2009 BVDSS = 650 V RDS(on) typ HFP2N65S ID = 1.8 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(O

 5.3. hfp2n60s.pdf Size:170K _update_mosfet

HFP2N90
HFP2N90

March 2014 BVDSS = 600 V RDS(on) typ HFP2N60S ID = 2.0 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area L

5.4. hfp2n60u.pdf Size:192K _update_mosfet

HFP2N90
HFP2N90

Nov 2013 BVDSS = 600 V RDS(on) typ = HFP2N60U ID = 2 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower R

 5.5. hfp2n70s.pdf Size:191K _update_mosfet

HFP2N90
HFP2N90

Dec 2009 BVDSS = 700 V RDS(on) typ HFP2N70S ID = 1.6 A 700V N-Channel MOSFET TO-220F FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.2 nC (Typ.) Extended Safe Operating Area Lower RDS(

5.6. hfp2n60.pdf Size:210K _shantou-huashan

HFP2N90
HFP2N90

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP2N60 █ APPLICATIONSL TO-220 High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯-55~150℃ 1―G Tj ——Operating Junction Temperature ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ 2―D PD —— Allowable Power Dissipation(Tc=25℃)

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