HFP2N90
MOSFET. Datasheet pdf. Equivalent
Type Designator: HFP2N90
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 107
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 2.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17
nC
trⓘ - Rise Time: 55
nS
Cossⓘ -
Output Capacitance: 70
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.6
Ohm
Package:
TO-220
HFP2N90
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HFP2N90
Datasheet (PDF)
..1. Size:212K semihow
hfp2n90.pdf 
Feb 2014BVDSS = 900 VRDS(on) typ HFP2N90ID = 2.2 A900V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lower
9.1. Size:210K shantou-huashan
hfp2n60.pdf
N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP2N60 APPLICATIONSL TO-220 High-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~150 1G Tj Operating Junction Temperature 150 2D PD Allowable Power DissipationTc=25
9.2. Size:391K semihow
hfp2n60f hfs2n60f.pdf
Oct 2016HFP2N60F / HFS2N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 2A Excellent Switching CharacteristicsRDS(on), Typ 3.6 100% Avalanche TestedQg, Typ 6.5 nC RoHS CompliantHFP2N60F HFS2N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unles
9.3. Size:191K semihow
hfp2n65u.pdf
Nov 2013BVDSS = 650 VRDS(on) typ = 5 HFP2N65U ID = 2 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower R
9.4. Size:191K semihow
hfp2n65s.pdf
Sep 2009BVDSS = 650 VRDS(on) typ HFP2N65SID = 1.8 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(O
9.5. Size:192K semihow
hfp2n60u.pdf
Nov 2013BVDSS = 600 VRDS(on) typ = HFP2N60U ID = 2 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower R
9.6. Size:170K semihow
hfp2n60s.pdf
March 2014BVDSS = 600 VRDS(on) typ HFP2N60SID = 2.0 A600V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area L
9.7. Size:191K semihow
hfp2n70s.pdf
Dec 2009BVDSS = 700 VRDS(on) typ HFP2N70SID = 1.6 A700V N-Channel MOSFETTO-220FFEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.2 nC (Typ.) Extended Safe Operating Area Lower RDS(
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