HFP8N60S Todos los transistores

 

HFP8N60S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFP8N60S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 147 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 61 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO-220
 

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HFP8N60S Datasheet (PDF)

 ..1. Size:194K  semihow
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HFP8N60S

Dec 2006BVDSS = 600 VRDS(on) typ HFP8N60SID = 7.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(O

 7.1. Size:197K  semihow
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HFP8N60S

August 2012BVDSS = 600 VRDS(on) typ HFP8N60U ID = 7.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

 8.1. Size:198K  semihow
 hfp8n65u.pdf pdf_icon

HFP8N60S

March 2013BVDSS = 650 VRDS(on) typ HFP8N65U ID = 7.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

 8.2. Size:192K  semihow
 hfp8n65s.pdf pdf_icon

HFP8N60S

Sep 2009BVDSS = 650 VRDS(on) typ HFP8N65SID = 7.2 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(O

MOSTRAR MÁS

Otros transistores... HFP5N65U , HFP5N70S , HFP6N60U , HFP6N65U , HFP6N70U , HFP6N90 , HFP730S , HFP730U , SPP20N60C3 , HFP8N60U , HFP8N65S , HFP8N65U , HFP8N70U , HFP9N50 , HFS10N60S , HFS10N60U , HFS10N65S .

History: HFH13N80 | FQPF30N06

 

 
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