All MOSFET. HFP8N60S Datasheet

 

HFP8N60S Datasheet and Replacement


   Type Designator: HFP8N60S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220
 

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HFP8N60S Datasheet (PDF)

 ..1. Size:194K  semihow
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HFP8N60S

Dec 2006BVDSS = 600 VRDS(on) typ HFP8N60SID = 7.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(O

 7.1. Size:197K  semihow
 hfp8n60u.pdf pdf_icon

HFP8N60S

August 2012BVDSS = 600 VRDS(on) typ HFP8N60U ID = 7.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

 8.1. Size:198K  semihow
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HFP8N60S

March 2013BVDSS = 650 VRDS(on) typ HFP8N65U ID = 7.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

 8.2. Size:192K  semihow
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HFP8N60S

Sep 2009BVDSS = 650 VRDS(on) typ HFP8N65SID = 7.2 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(O

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Datasheet: HFP5N65U , HFP5N70S , HFP6N60U , HFP6N65U , HFP6N70U , HFP6N90 , HFP730S , HFP730U , SPP20N60C3 , HFP8N60U , HFP8N65S , HFP8N65U , HFP8N70U , HFP9N50 , HFS10N60S , HFS10N60U , HFS10N65S .

History: CTLM8110-M832D | HSS2306A

Keywords - HFP8N60S MOSFET datasheet

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