HFP8N65U MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFP8N65U

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: TO-220

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HFP8N65U datasheet

 ..1. Size:198K  semihow
 hfp8n65u.pdf pdf_icon

HFP8N65U

March 2013 BVDSS = 650 V RDS(on) typ HFP8N65U ID = 7.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Area

 7.1. Size:192K  semihow
 hfp8n65s.pdf pdf_icon

HFP8N65U

Sep 2009 BVDSS = 650 V RDS(on) typ HFP8N65S ID = 7.2 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Extended Safe Operating Area Lower RDS(O

 8.1. Size:197K  semihow
 hfp8n60u.pdf pdf_icon

HFP8N65U

August 2012 BVDSS = 600 V RDS(on) typ HFP8N60U ID = 7.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Area

 8.2. Size:194K  semihow
 hfp8n60s.pdf pdf_icon

HFP8N65U

Dec 2006 BVDSS = 600 V RDS(on) typ HFP8N60S ID = 7.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Extended Safe Operating Area Lower RDS(O

MOSTRAR MÁS

Otros transistores... HFP6N65U, HFP6N70U, HFP6N90, HFP730S, HFP730U, HFP8N60S, HFP8N60U, HFP8N65S, SPP20N60C3, HFP8N70U, HFP9N50, HFS10N60S, HFS10N60U, HFS10N65S, HFS10N65U, HFS10N80, HFS11N40