HFP8N65U Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HFP8N65U
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 50 ns
Cossⓘ - Выходная емкость: 100 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO-220
Аналог (замена) для HFP8N65U
HFP8N65U Datasheet (PDF)
hfp8n65u.pdf

March 2013BVDSS = 650 VRDS(on) typ HFP8N65U ID = 7.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area
hfp8n65s.pdf

Sep 2009BVDSS = 650 VRDS(on) typ HFP8N65SID = 7.2 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(O
hfp8n60u.pdf

August 2012BVDSS = 600 VRDS(on) typ HFP8N60U ID = 7.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area
hfp8n60s.pdf

Dec 2006BVDSS = 600 VRDS(on) typ HFP8N60SID = 7.5 A600V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(O
Другие MOSFET... HFP6N65U , HFP6N70U , HFP6N90 , HFP730S , HFP730U , HFP8N60S , HFP8N60U , HFP8N65S , AON7410 , HFP8N70U , HFP9N50 , HFS10N60S , HFS10N60U , HFS10N65S , HFS10N65U , HFS10N80 , HFS11N40 .
History: 2N65G-TN3-T | VBZFB40N06 | BRCS120N06SYM | AP9938GEY | P1850EF | FDPF8N50NZT | DMN67D8LW
History: 2N65G-TN3-T | VBZFB40N06 | BRCS120N06SYM | AP9938GEY | P1850EF | FDPF8N50NZT | DMN67D8LW



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