HFS10N60S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFS10N60S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 9.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 69 nS
Cossⓘ - Capacitancia de salida: 145 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET HFS10N60S
Principales características: HFS10N60S
hfs10n60s.pdf
Nov 2007 BVDSS = 600 V RDS(on) typ = 0.67 HFS10N60S ID = 9.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Unrivalled Gate Charge 29 nC (Typ )
hfs10n60u.pdf
Oct 2013 BVDSS = 600 V RDS(on) typ = 0.67 HFS10N60U ID = 9.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area L
hfs10n65s.pdf
March 2014 BVDSS = 650 V RDS(on) typ HFS10N65S ID = 9.5 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area
hfs10n65u.pdf
Oct 2013 BVDSS = 650 V RDS(on) typ = 0.8 HFS10N65U ID = 9.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lo
Otros transistores... HFP730S , HFP730U , HFP8N60S , HFP8N60U , HFP8N65S , HFP8N65U , HFP8N70U , HFP9N50 , 13N50 , HFS10N60U , HFS10N65S , HFS10N65U , HFS10N80 , HFS11N40 , HFS12N60S , HFS12N60U , HFS12N65S .
History: JMPF10N60BJ
History: JMPF10N60BJ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP30H150K | AP30H150G | AP3065SD | AP3004S | AP3003 | AP3002S | AP2N65K | AP2716SD | AP2716QD | AP2716KD | AP2714SD | AP2714QD | AP25P30Q | AP25P06Q | AP25P06K | AP25N06Q
Popular searches
2sc2525 | tip73 | 2n3392 | 2n2369a | 2sc733 | a933 transistor | d209l | irfb4321