HFS10N60S Specs and Replacement

Type Designator: HFS10N60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-220F

HFS10N60S substitution

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HFS10N60S datasheet

 ..1. Size:243K  semihow
 hfs10n60s.pdf pdf_icon

HFS10N60S

Nov 2007 BVDSS = 600 V RDS(on) typ = 0.67 HFS10N60S ID = 9.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Unrivalled Gate Charge 29 nC (Typ ) ... See More ⇒

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 hfs10n60u.pdf pdf_icon

HFS10N60S

Oct 2013 BVDSS = 600 V RDS(on) typ = 0.67 HFS10N60U ID = 9.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area L... See More ⇒

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 hfs10n65s.pdf pdf_icon

HFS10N60S

March 2014 BVDSS = 650 V RDS(on) typ HFS10N65S ID = 9.5 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area ... See More ⇒

 7.2. Size:302K  semihow
 hfs10n65u.pdf pdf_icon

HFS10N60S

Oct 2013 BVDSS = 650 V RDS(on) typ = 0.8 HFS10N65U ID = 9.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

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Detailed specifications: HFP730S, HFP730U, HFP8N60S, HFP8N60U, HFP8N65S, HFP8N65U, HFP8N70U, HFP9N50, 13N50, HFS10N60U, HFS10N65S, HFS10N65U, HFS10N80, HFS11N40, HFS12N60S, HFS12N60U, HFS12N65S

Keywords - HFS10N60S MOSFET specs

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