All MOSFET. HFS10N60S Datasheet

 

HFS10N60S Datasheet and Replacement


   Type Designator: HFS10N60S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220F
 

 HFS10N60S substitution

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HFS10N60S Datasheet (PDF)

 ..1. Size:243K  semihow
 hfs10n60s.pdf pdf_icon

HFS10N60S

Nov 2007BVDSS = 600 VRDS(on) typ = 0.67 HFS10N60SID = 9.5 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Unrivalled Gate Charge : 29 nC (Typ )

 6.1. Size:302K  semihow
 hfs10n60u.pdf pdf_icon

HFS10N60S

Oct 2013BVDSS = 600 VRDS(on) typ = 0.67 HFS10N60UID = 9.5 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L

 7.1. Size:159K  semihow
 hfs10n65s.pdf pdf_icon

HFS10N60S

March 2014BVDSS = 650 VRDS(on) typ HFS10N65SID = 9.5 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area

 7.2. Size:302K  semihow
 hfs10n65u.pdf pdf_icon

HFS10N60S

Oct 2013BVDSS = 650 VRDS(on) typ = 0.8 HFS10N65UID = 9.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lo

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Datasheet: HFP730S , HFP730U , HFP8N60S , HFP8N60U , HFP8N65S , HFP8N65U , HFP8N70U , HFP9N50 , TK10A60D , HFS10N60U , HFS10N65S , HFS10N65U , HFS10N80 , HFS11N40 , HFS12N60S , HFS12N60U , HFS12N65S .

History: SSF18N50F

Keywords - HFS10N60S MOSFET datasheet

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