HFS10N80 Todos los transistores

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 hfs10n80.pdf

Dec 2010 BVDSS = 800 V RDS(on) typ = 0.92 HFS10N80 ID = 9.4 A 800V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 58 nC (Typ.) Unrivalled Gate Charge 58 nC (Typ ) E

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 hfs10n80a.pdf

June 2021 BVDSS = 800 V RDS(on) Typ = 0.92 HFS10N80A ID = 9.4 A 800V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 58 nC (Typ.) Extended Safe Ope

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 hfs10n65s.pdf

March 2014 BVDSS = 650 V RDS(on) typ HFS10N65S ID = 9.5 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area

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 hfs10n65u.pdf

Oct 2013 BVDSS = 650 V RDS(on) typ = 0.8 HFS10N65U ID = 9.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area Lo

 8.3. Size:302K  semihow
 hfs10n60u.pdf

Oct 2013 BVDSS = 600 V RDS(on) typ = 0.67 HFS10N60U ID = 9.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Extended Safe Operating Area L

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 hfs10n60s.pdf

Nov 2007 BVDSS = 600 V RDS(on) typ = 0.67 HFS10N60S ID = 9.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 29 nC (Typ.) Unrivalled Gate Charge 29 nC (Typ )

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 hfs10n65js.pdf

Feb 2023 HFS10N65JS 650V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 10 A Excellent Switching Characteristics RDS(on), Typ 0.82 100% Avalanche Tested Qg, Typ 36.3 nC RoHS Compliant TO-220FS Symbol S D G Absolute Maximum