HFS13N50U MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFS13N50U

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 41 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm

Encapsulados: TO-220F

 Búsqueda de reemplazo de HFS13N50U MOSFET

- Selecciónⓘ de transistores por parámetros

 

HFS13N50U datasheet

 ..1. Size:151K  semihow
 hfs13n50u.pdf pdf_icon

HFS13N50U

Nov 2013 BVDSS = 500 V RDS(on) typ = 0.39 HFS13N50U ID = 13 A 500V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 34 nC (Typ.) Extended Safe Operating Area Lo

 6.1. Size:154K  semihow
 hfs13n50s.pdf pdf_icon

HFS13N50U

March 2014 BVDSS = 500 V RDS(on) typ HFS13N50S ID = 13 A 500V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Extended Safe Operating Area

 6.2. Size:930K  haolin elec
 hfs13n50.pdf pdf_icon

HFS13N50U

Sep 2009 BVDSS = 500 V RDS(on) typ = 0.4 HFS13N50 ID = 13 A 500V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Unrivalled Gate Charge 38 nC (Typ ) Ext

 8.1. Size:185K  semihow
 hfs13n60u.pdf pdf_icon

HFS13N50U

Sep 2012 BVDSS = 600 V RDS(on) typ = 0.33 HFS13N60U ID = 14.0 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 60.0 nC (Typ.) Extended Safe Operating Area

MOSTRAR MÁS

Otros transistores... HFS10N65U, HFS10N80, HFS11N40, HFS12N60S, HFS12N60U, HFS12N65S, HFS12N65U, HFS13N50S, STP80NF70, HFS13N60U, HFS13N65U, HFS18N50U, HFS2N60, HFS2N60S, HFS2N60U, HFS2N65S, HFS2N65U