All MOSFET. HFS13N50U Datasheet

 

HFS13N50U Datasheet and Replacement


   Type Designator: HFS13N50U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO-220F
 

 HFS13N50U substitution

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HFS13N50U Datasheet (PDF)

 ..1. Size:151K  semihow
 hfs13n50u.pdf pdf_icon

HFS13N50U

Nov 2013BVDSS = 500 VRDS(on) typ = 0.39 HFS13N50U ID = 13 A500V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 34 nC (Typ.) Extended Safe Operating Area Lo

 6.1. Size:154K  semihow
 hfs13n50s.pdf pdf_icon

HFS13N50U

March 2014BVDSS = 500 VRDS(on) typ HFS13N50SID = 13 A500V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area

 6.2. Size:930K  haolin elec
 hfs13n50.pdf pdf_icon

HFS13N50U

Sep 2009BVDSS = 500 VRDS(on) typ = 0.4 HFS13N50ID = 13 A500V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) Ext

 8.1. Size:185K  semihow
 hfs13n60u.pdf pdf_icon

HFS13N50U

Sep 2012BVDSS = 600 VRDS(on) typ = 0.33 HFS13N60U ID = 14.0 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ.) Extended Safe Operating Area

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Datasheet: HFS10N65U , HFS10N80 , HFS11N40 , HFS12N60S , HFS12N60U , HFS12N65S , HFS12N65U , HFS13N50S , 20N50 , HFS13N60U , HFS13N65U , HFS18N50U , HFS2N60 , HFS2N60S , HFS2N60U , HFS2N65S , HFS2N65U .

History: AP6679GJ-HF

Keywords - HFS13N50U MOSFET datasheet

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