HFS13N60U MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFS13N60U

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 90 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.41 Ohm

Encapsulados: TO-220F

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HFS13N60U datasheet

 ..1. Size:185K  semihow
 hfs13n60u.pdf pdf_icon

HFS13N60U

Sep 2012 BVDSS = 600 V RDS(on) typ = 0.33 HFS13N60U ID = 14.0 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 60.0 nC (Typ.) Extended Safe Operating Area

 7.1. Size:186K  semihow
 hfs13n65u.pdf pdf_icon

HFS13N60U

March 2013 BVDSS = 650 V RDS(on) typ = 0.4 HFS13N65U ID = 14.0 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 60.0 nC (Typ.) Extended Safe Operating Area

 8.1. Size:151K  semihow
 hfs13n50u.pdf pdf_icon

HFS13N60U

Nov 2013 BVDSS = 500 V RDS(on) typ = 0.39 HFS13N50U ID = 13 A 500V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 34 nC (Typ.) Extended Safe Operating Area Lo

 8.2. Size:154K  semihow
 hfs13n50s.pdf pdf_icon

HFS13N60U

March 2014 BVDSS = 500 V RDS(on) typ HFS13N50S ID = 13 A 500V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Extended Safe Operating Area

MOSTRAR MÁS

Otros transistores... HFS10N80, HFS11N40, HFS12N60S, HFS12N60U, HFS12N65S, HFS12N65U, HFS13N50S, HFS13N50U, IRFP450, HFS13N65U, HFS18N50U, HFS2N60, HFS2N60S, HFS2N60U, HFS2N65S, HFS2N65U, HFS2N70S