All MOSFET. HFS13N60U Datasheet

 

HFS13N60U Datasheet and Replacement


   Type Designator: HFS13N60U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.41 Ohm
   Package: TO-220F
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HFS13N60U Datasheet (PDF)

 ..1. Size:185K  semihow
 hfs13n60u.pdf pdf_icon

HFS13N60U

Sep 2012BVDSS = 600 VRDS(on) typ = 0.33 HFS13N60U ID = 14.0 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ.) Extended Safe Operating Area

 7.1. Size:186K  semihow
 hfs13n65u.pdf pdf_icon

HFS13N60U

March 2013BVDSS = 650 VRDS(on) typ = 0.4 HFS13N65U ID = 14.0 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ.) Extended Safe Operating Area

 8.1. Size:151K  semihow
 hfs13n50u.pdf pdf_icon

HFS13N60U

Nov 2013BVDSS = 500 VRDS(on) typ = 0.39 HFS13N50U ID = 13 A500V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 34 nC (Typ.) Extended Safe Operating Area Lo

 8.2. Size:154K  semihow
 hfs13n50s.pdf pdf_icon

HFS13N60U

March 2014BVDSS = 500 VRDS(on) typ HFS13N50SID = 13 A500V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area

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