HFS2N60U MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFS2N60U

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 23 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 38 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: TO-220F

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HFS2N60U datasheet

 ..1. Size:182K  semihow
 hfs2n60u.pdf pdf_icon

HFS2N60U

Nov 2013 BVDSS = 600 V RDS(on) typ HFS2N60U ID = 2 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (Typ.) Extended Safe Operating Area Lower

 7.1. Size:150K  semihow
 hfs2n60.pdf pdf_icon

HFS2N60U

July 2005 BVDSS = 600 V RDS(on) typ HFS2N60 ID = 2.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS

 7.2. Size:391K  semihow
 hfp2n60f hfs2n60f.pdf pdf_icon

HFS2N60U

Oct 2016 HFP2N60F / HFS2N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 2A Excellent Switching Characteristics RDS(on), Typ 3.6 100% Avalanche Tested Qg, Typ 6.5 nC RoHS Compliant HFP2N60F HFS2N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unles

 7.3. Size:163K  semihow
 hfs2n60s.pdf pdf_icon

HFS2N60U

March 2014 BVDSS = 600 V RDS(on) typ HFS2N60S ID = 2.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 6.0 nC (Typ.) Extended Safe Operating Area

MOSTRAR MÁS

Otros transistores... HFS12N65U, HFS13N50S, HFS13N50U, HFS13N60U, HFS13N65U, HFS18N50U, HFS2N60, HFS2N60S, IRFP250, HFS2N65S, HFS2N65U, HFS2N70S, HFS2N90, HFS3N80, HFS4N50, HFS4N60, HFS4N90