HFS2N60U Specs and Replacement

Type Designator: HFS2N60U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO-220F

HFS2N60U substitution

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HFS2N60U datasheet

 ..1. Size:182K  semihow
 hfs2n60u.pdf pdf_icon

HFS2N60U

Nov 2013 BVDSS = 600 V RDS(on) typ HFS2N60U ID = 2 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (Typ.) Extended Safe Operating Area Lower... See More ⇒

 7.1. Size:150K  semihow
 hfs2n60.pdf pdf_icon

HFS2N60U

July 2005 BVDSS = 600 V RDS(on) typ HFS2N60 ID = 2.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS... See More ⇒

 7.2. Size:391K  semihow
 hfp2n60f hfs2n60f.pdf pdf_icon

HFS2N60U

Oct 2016 HFP2N60F / HFS2N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 2A Excellent Switching Characteristics RDS(on), Typ 3.6 100% Avalanche Tested Qg, Typ 6.5 nC RoHS Compliant HFP2N60F HFS2N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unles... See More ⇒

 7.3. Size:163K  semihow
 hfs2n60s.pdf pdf_icon

HFS2N60U

March 2014 BVDSS = 600 V RDS(on) typ HFS2N60S ID = 2.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 6.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

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Detailed specifications: HFS12N65U, HFS13N50S, HFS13N50U, HFS13N60U, HFS13N65U, HFS18N50U, HFS2N60, HFS2N60S, IRFP250, HFS2N65S, HFS2N65U, HFS2N70S, HFS2N90, HFS3N80, HFS4N50, HFS4N60, HFS4N90

Keywords - HFS2N60U MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.